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| AP9971GM RoHS-compliant Product Advanced Power Electronics Corp. Low On-resistance Single Drive Requirement Surface Mount Package D1 G2 S2 D2 D2 D1 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 50m 5A D2 SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. G1 D1 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=100 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 10V Continuous Drain Current , VGS @ 10V Pulsed Drain Current 1,2 3 Rating 60 +25 5 3.2 30 2 0.016 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient 3 Value 62.5 Unit /W Data and specifications subject to change without notice 1 200811042 AP9971GM Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Test Conditions VGS=0V, ID=250uA VGS=10V, ID=5A VGS=4.5V, ID=2.5A VDS=VGS, ID=250uA VDS=10V, ID=5A VDS=60V, VGS=0V VGS= +25V ID=5A VDS=48V VGS=10V VDS=30V ID=5A RG=3.3,VGS=10V RD=6 VGS=0V VDS=25V f=1.0MHz Min. 60 1 - Typ. 0.06 16 32.5 4.9 8.8 9.6 10 30 5.5 1658 156 109 Max. Units 50 60 3 1 25 +100 V V/ m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Leakage Current (Tj=70 C) VDS=48V ,VGS=0V Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=1.6A, VGS=0V IS=5A, VGS=0V, dI/dt=100A/s Min. - Typ. 29.2 48 Max. Units 1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP9971GM 35 35 T A =25 C 30 o ID , Drain Current (A) 25 ID , Drain Current (A) 10V 6.0V 4.5V 30 T A =150 o C 10V 6.0V 4.5V 25 20 20 15 15 10 10 V G =3.0V 5 5 V G =3.0V 0 0 1 2 3 4 5 0 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 55 2.4 I D =5A 50 I D =5A V G =10V 2.0 T A =25 o C Normalized RDS(ON) 1.6 RDSON (m) 45 1.2 40 0.8 35 0.4 30 1 2 3 4 5 6 7 8 9 10 11 0.0 -50 0 50 100 150 V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.8 100 2.4 10 2 IS (A) T j =150 C 1 o T j =25 C o VGS(th) (V) 1.3 1.5 1.6 1.2 0.1 0.8 0.01 0.1 0.3 0.5 0.7 0.9 1.1 0.4 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP9971GM f=1.0MHz 14 10000 I D =5A 12 VGS , Gate to Source Voltage (V) 10 V DS =30V V DS =38V V DS =48V C (pF) Ciss 1000 8 6 100 4 Coss Crss 2 0 0 5 10 15 20 25 30 35 40 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 DUTY=0.5 Normalized Thermal Response (R thja) 10 0.2 100us 1ms 0.1 0.1 0.05 ID (A) 1 PDM 0.02 0.01 10ms 100ms 0.1 t T Duty factor = t/T Peak Tj = P DM x Rthja + Ta Rthja = 135/W 0.01 T A =25 C Single Pulse 0.01 0.1 1 10 100 o 1s DC Single Pulse 0.001 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : SO-8 D Millimeters SYMBOLS MIN NOM MAX 8 7 6 5 E1 E A A1 B c D E E1 e 1.35 0.10 0.33 0.19 4.80 5.80 3.80 1.55 0.18 0.41 0.22 4.90 6.15 3.90 1.27 TYP 0.254 TYP 1.75 0.25 0.51 0.25 5.00 6.50 4.00 1 2 3 4 e B G L 0.38 0.00 4.00 0.90 8.00 A A1 G 1.All Dimension Are In Millimeters. 2.Dimension Does Not Include Mold Protrusions. Part Marking Information & Packing : SO-8 Part Number Package Code meet Rohs requirement 9971GM YWWSSS Date Code (YWWSSS) YLast Digit Of The Year WWWeek SSSSequence 5 |
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